Small-Signal Modeling of RF CMOS
نویسندگان
چکیده
Abstract This paper presents accurate small-signal modeling of RF CMOS, valid from DC to GHz ranges, using device simulation and analytical modeling. Distributed NQS effects in terms of circuit parameters are discussed and an estimation of the limit up to which quasi-static MOSFET models are reasonable is presented. The impact of the substrate network through gmb multiplication on terminal ac characteristics is also discussed.
منابع مشابه
CMOS RF Modeling and Parameter Extraction Approaches Taking Charge Conservation into Account
A charge conserving small-signal equivalent circuit with very simple and accurate parameter extraction method for a three-terminal CMOS RF model is presented. We found that significant errors in circuit performances can be obtained if charge conserving non-reciprocal capacitances are not properly considered. It is also found that one accurate large-signal I-V model is enough to be used for DC, ...
متن کاملRF CMOS Device Modeling : BSIM-Based Physical Model with Root-Like Construction Approach - Small Signal Modeling -
A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimizati...
متن کاملA Small-Signal Analysis Based Thermal Noise Modeling Method for RF SOI MOSFETs
We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...
متن کاملModeling of Substrate Noise Impact on a Single-Ended Cascode LNA in a Lightly Doped Substrate (RESEARCH NOTE)
Substrate noise generated by digital circuits on mixed-signal ICs can disturb the sensitiveanalog/RF circuits, such as Low Noise Amplifier (LNA), sharing the same substrate. This paperinvestigates the adverse impact of the substrate noise on a high frequency cascode LNA laid out on alightly doped substrate. By studying the major noise coupling mechanisms, a new and efficientmodeling method is p...
متن کاملModeling Frequency Response of 65 nm CMOS RF Power Devices
This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (fT) and maximum oscillation frequency (fmax) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in fT and fmax is the presence of non-scalable parasitic resistances...
متن کامل